Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 588/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
7.002 |
|
- | Standard | 400V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -40°C ~ 150°C |
|
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|
Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
3.870 |
|
- | Standard | 600V | 10A | 1.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220NFM | 150°C (Max) |
|
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
2.358 |
|
- | Standard | 600V | 10A | 2.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220NFM | 150°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 18A D2PAK |
3.132 |
|
- | Schottky | 35V | 18A | 600mV @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5mA @ 35V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 100V 30A I2PAK |
4.554 |
|
- | Schottky | 100V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A TO247AD |
4.068 |
|
- | Standard | 300V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A TO247AD |
3.744 |
|
- | Standard | 400V | 20A | 1.5V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 16A TO263AB |
8.010 |
|
- | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 16A TO263AB |
7.992 |
|
Automotive, AEC-Q101 | Schottky | 60V | 16A | 730mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 175°C |
|
|
|
Power Integrations |
DIODE GEN PURP 600V 3A TO263AB |
2.160 |
|
Qspeed™ | Standard | 600V | 3A | 3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 9.8ns | 250µA @ 600V | 11pF @ 10V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 150°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
8.244 |
|
- | Standard | 300V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
2.052 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 8A TO263AB |
5.382 |
|
- | Standard | 500V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
7.380 |
|
- | Standard | 75V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
7.236 |
|
- | Standard | 75V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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|
Sanken |
DIODE GEN PURP 600V 3A TO263 |
4.734 |
|
- | Standard | 600V | 3A | 1.75V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
6.840 |
|
- | Standard | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
4.374 |
|
- | Standard | 150V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO263AB |
4.500 |
|
- | Standard | 50V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
8.658 |
|
- | Standard | 100V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
7.056 |
|
- | Standard | 150V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
7.848 |
|
- | Standard | 200V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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|
Sanken |
DIODE GEN PURP 400V 5A TO220F-2L |
3.078 |
|
- | Standard | 400V | 5A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 50µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -40°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 15V 6A POWERMITE |
3.384 |
|
- | Schottky | 15V | 6A | 320mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 15V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 20A D2PAK |
8.136 |
|
- | Schottky | 15V | 20A | 520mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 2000pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
5.454 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 19A TO263AB |
7.722 |
|
- | Schottky | 15V | 19A | 360mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10.5mA @ 15V | 2000pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO219AB |
4.230 |
|
FRED Pt® | Standard | 600V | 2A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 3µA @ 600V | - | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 100°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A TO247AD |
6.552 |
|
- | Standard | 600V | 20A | 1.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V TO-263AB |
6.264 |
|
- | Schottky | 100V | 30A | 910mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |