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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 546/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SS10P5-M3/87A
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 50V 7A TO277A
8.910
eSMP®
Schottky
50V
7A
550mV @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
VS-20MQ040NTRPBF
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 2.1A DO214AC
6.894
-
Schottky
40V
2.1A
690mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
38pF @ 10V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
VS-20MQ060NTRPBF
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 2A DO214AC
8.964
-
Schottky
60V
2A
780mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
31pF @ 10V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HER602G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
3.276
-
Standard
100V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER603G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A R-6
4.878
-
Standard
200V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER604G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A R-6
3.060
-
Standard
300V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER605G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A R-6
5.886
-
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER606G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A R-6
8.982
-
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
65pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER602G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
2.286
-
Standard
100V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
UH4PBCHM3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 2A TO277A
8.730
Automotive, AEC-Q101, eSMP®
Standard
100V
2A
1.05V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
21pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
UH4PCCHM3_A/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 2A TO277A
2.484
Automotive, AEC-Q101, eSMP®
Standard
150V
2A
1.05V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
21pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SR810HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 8A DO201AD
3.474
Automotive, AEC-Q101
Schottky
100V
8A
920mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
RB050LA-40TR
Rohm Semiconductor
DIODE SCHOTTKY 40V 3A PMDT
8.550
-
Schottky
40V
3A
550mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
SOD-128
PMDT
150°C (Max)
V10PM12HM3_A/H
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 120V 3.9A TO277A
2.556
Automotive, AEC-Q101, eSMP®, TMBS®
Schottky
120V
3.9A
830mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
V10PM12HM3_A/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 120V 3.9A TO277A
8.244
Automotive, AEC-Q101, eSMP®, TMBS®
Schottky
120V
3.9A
830mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
VBT5200-E3/4W
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 5A 200V TO-263AB
8.316
-
Schottky
200V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
-40°C ~ 150°C
MURF8L60 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A ITO220AC
2.718
-
Standard
600V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 600V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 175°C
V10P6HM3_A/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 60V 10A TO277A
7.722
Automotive, AEC-Q101, eSMP®, TMBS®
Schottky
60V
10A
590mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.9mA @ 60V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
V10P8HM3_A/H
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 80V 10A TO277A
2.268
Automotive, AEC-Q101, eSMP®, TMBS®
Schottky
80V
10A
680mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 80V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
DL4007-13-F
Diodes Incorporated
DIODE GEN PURP 1KV 1A MELF
5.760
-
Standard
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
MELF
-55°C ~ 150°C
SB540B-G
Comchip Technology
DIODE SCHOTTKY 40V 5A DO201AD
4.140
-
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
350pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 125°C
VT5200-E3/4W
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 5A 200V TO-220AC
2.142
TMBS®
Schottky
200V
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
RBR5L30BTE25
Rohm Semiconductor
DIODE SCHOTTKY 30V 5A PMDS
4.068
-
Schottky
30V
5A
490mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 30V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C (Max)
RBR5L40ATE25
Rohm Semiconductor
DIODE SCHOTTKY 40V 5A PMDS
3.508
-
Schottky
40V
5A
530mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C (Max)
RBR5L60ATE25
Rohm Semiconductor
DIODE SCHOTTKY 60V 5A PMDS
3.798
-
Schottky
60V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 60V
-
Surface Mount
DO-214AC, SMA
PMDS
150°C (Max)
MBR10100HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
5.094
-
Schottky
100V
10A
850mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
SR1202 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 12A DO201AD
8.028
-
Schottky
20V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR1202HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 12A DO201AD
4.140
Automotive, AEC-Q101
Schottky
20V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR1203 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 12A DO201AD
5.562
-
Schottky
30V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
SR1203HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 12A DO201AD
7.506
Automotive, AEC-Q101
Schottky
30V
12A
550mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C