Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 482/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A SMB |
4.950 |
|
FRED Pt® | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 3µA @ 600V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
7.794 |
|
eSMP® | Standard | 100V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
6.516 |
|
eSMP® | Standard | 200V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A TO277A |
2.160 |
|
eSMP® | Standard | 400V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A R-6 |
4.806 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A R-6 |
4.338 |
|
Automotive, AEC-Q101 | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 6A R-6 |
7.902 |
|
- | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
3.060 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A R-6 |
5.814 |
|
Automotive, AEC-Q101 | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A R-6 |
5.742 |
|
- | Standard | 200V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 6A R-6 |
8.910 |
|
Automotive, AEC-Q101 | Standard | 200V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
4.662 |
|
- | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A R-6 |
7.686 |
|
Automotive, AEC-Q101 | Standard | 400V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
5.130 |
|
- | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 6A R-6 |
5.904 |
|
Automotive, AEC-Q101 | Standard | 600V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 6A R-6 |
2.196 |
|
- | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 6A R-6 |
3.294 |
|
Automotive, AEC-Q101 | Standard | 800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD |
8.370 |
|
- | Standard | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO201AD |
7.830 |
|
- | Standard | 400V | 5A | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO201AD |
2.250 |
|
- | Standard | 600V | 5A | 2.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 30µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 45V 10A 5DFN |
5.094 |
|
- | Schottky | 45V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
2.682 |
|
SBR® | Super Barrier | 45V | 10A | 550mV @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 380µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A DO214AB |
6.372 |
|
- | Standard | 400V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A DO214AB |
4.752 |
|
- | Standard | 600V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 3A DO201AD |
8.946 |
|
- | Standard | 500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
5.076 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDS |
20.384 |
|
- | Schottky | 60V | 3A | 680mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
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|
Comchip Technology |
DIODE SCHOTTKY 200V 5A DO214AC |
4.572 |
|
- | Schottky | 200V | 5A (DC) | 900mV @ 5mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
5.022 |
|
- | Standard | 600V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 600V | 34pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
6.930 |
|
- | Standard | 800V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |