Raddrizzatori - Singoli
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 472/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO214AA |
6.192 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 3A DO214AA |
8.298 |
|
Automotive, AEC-Q101 | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AA |
4.608 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 3A DO214AA |
7.794 |
|
Automotive, AEC-Q101 | Schottky | 90V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE |
8.208 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 1A DO41 |
7.344 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 50V 3A DO201AD |
3.780 |
|
- | Standard | 50V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 100V 3A DO201AD |
2.880 |
|
- | Standard | 100V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 200V 3A DO201AD |
2.268 |
|
- | Standard | 200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 400V 3A DO201AD |
8.694 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 600V 3A DO201AD |
7.038 |
|
- | Standard | 600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE GEN PURP 800V 3A DO201AD |
4.086 |
|
- | Standard | 800V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
8.172 |
|
Automotive, AEC-Q101 | Standard | 400V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 200V 2A DO214AA |
2.538 |
|
- | Schottky | 200V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
6.696 |
|
- | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
4.122 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 100V 3A DO201AD |
6.858 |
|
- | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 95pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
5.454 |
|
Automotive, AEC-Q101, SWITCHMODE™ | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO201AD |
8.568 |
|
- | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO201AD |
7.992 |
|
- | Standard | 100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO201AD |
5.220 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO201AD |
3.906 |
|
- | Standard | 300V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
3.636 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
3.564 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 35pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO201AD |
4.752 |
|
- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 35pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 3A DO201AD |
4.554 |
|
- | Standard | - | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 35pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
6.948 |
|
eSMP® | Standard | 100V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
6.426 |
|
eSMP® | Standard | 200V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A TO277A |
8.298 |
|
eSMP® | Standard | 400V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A TO277A |
7.416 |
|
eSMP® | Standard | 600V | 4A | 1.1V @ 4A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |