Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 468/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE SCHOTTKY 100V 5A POWERDI 5 |
7.704 |
|
- | Schottky | 100V | 5A | 620mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
5.202 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB |
5.364 |
|
- | Standard | 200V | 4A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO214AB |
8.604 |
|
- | Standard | 400V | 4A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO214AB |
6.336 |
|
- | Standard | 600V | 4A | - | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 12A DO214AB |
8.226 |
|
- | Standard | 400V | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A DO214AB |
6.030 |
|
- | Standard | 600V | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 12A DO214AB |
6.768 |
|
- | Standard | 800V | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 12A DO214AB |
7.560 |
|
- | Standard | - | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Bourns |
DIO RECT VRRM 600V 3A SMC |
7.686 |
|
- | Standard | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
|
|
|
Bourns |
DIO RECT VRRM 800V 3A SMC |
2.358 |
|
- | Standard | 800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
|
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|
Bourns |
DIO RECT VRRM 1000V 3A SMC |
5.328 |
|
- | Standard | 1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1kV | - | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO214AC |
6.498 |
|
- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 3A DO214AC |
7.740 |
|
Automotive, AEC-Q101 | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 80V 2A SMB |
2.664 |
|
Automotive, AEC-Q101 | Schottky | 80V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 7µA @ 80V | 75pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 900V 500MA M-FLAT |
4.374 |
|
- | Standard | 900V | 500mA | 2.5V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 900V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 2A DO204AC |
5.850 |
|
- | Schottky | 90V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 90V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 2A DO204AC |
2.412 |
|
- | Schottky | 90V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 90V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 4A DO214AB |
3.708 |
|
- | Standard | 50V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 4A DO214AB |
8.388 |
|
- | Standard | 100V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 60V 3A 8WDFN |
8.190 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 900mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12µA @ 60V | - | Surface Mount | 8-PowerWDFN | 8-WDFN (3.3x3.3) | -65°C ~ 175°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 100V DO-214AB |
8.748 |
|
- | Schottky | 100V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 90V DO-214AB |
3.042 |
|
- | Schottky | 90V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SCHOTTKY 60V 3A 2010 |
3.366 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 180pF @ 4V, 1MHz | Surface Mount | 2010 (5025 Metric) | 2010 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 90V 2A SMB |
7.524 |
|
Automotive, AEC-Q101 | Schottky | 90V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 7µA @ 90V | 75pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
3.384 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 400V 2A DO15 |
5.472 |
|
- | Standard | 400V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
|
|
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Diodes Incorporated |
DIODE SCHOTTKY 50V 3A SMC |
5.508 |
|
- | Schottky | 50V | 3A | 650mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SCHOTTKY 150V 2A DO214AA |
7.956 |
|
- | Schottky | 150V | 2A | 820mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
7.182 |
|
- | Schottky | 20V | 1A | 750mV @ 3.1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 125pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |