Raddrizzatori - Singoli

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 379/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
SF23G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO204AC	3.528	-	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF25G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	6.138	-	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF22G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	2.394	-	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF23G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO204AC	8.856	-	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SRT19 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	2.394	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UG1A-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	3.636	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1B-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	3.222	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1C-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO204AL	4.122	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1D-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	3.924	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1A-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	3.544	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 50V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1B-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	3.222	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1C-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO204AL	5.796	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UG1D-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	5.832	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ES2DAF	ON Semiconductor	DIODE GEN PURP 200V 2A DO214AD	3.348	Automotive, AEC-Q101	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AD, SMAF	DO-214AD (SMAF)	-55°C ~ 150°C
ES1GL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	8.100	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5.598	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	5.994	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4937G-T	Diodes Incorporated	DIODE GEN PURP 600V 1A DO41	7.038	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
ES1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	5.328	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	2.394	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1C R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	2.376	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2M-F080	ON Semiconductor	DIODE GEN PURP 1KV 1.5A SMB	5.886	*	-	-	-	-	-	-	-	-	-	-	-	-
RF081M2STR	Rohm Semiconductor	DIODE GEN PURP 200V 800MA PMDU	3.312	-	Standard	200V	800mA	950mV @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 200V	-	Surface Mount	SOD-123	PMDU	150°C (Max)
RS07B-M-18	Vishay Semiconductor Diodes Division	DIODE GP 100V 500MA DO219AB	6.300	Automotive, AEC-Q101	Standard	100V	500mA	1.15V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
RS07D-M-18	Vishay Semiconductor Diodes Division	DIODE GP 200V 500MA DO219AB	7.578	Automotive, AEC-Q101	Standard	200V	500mA	1.15V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
RS07G-M-18	Vishay Semiconductor Diodes Division	DIODE GP 400V 500MA DO219AB	6.336	Automotive, AEC-Q101	Standard	400V	500mA	1.15V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SS1P5L-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A DO220AA	7.470	eSMP®	Schottky	50V	1A	590mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SS1P6L-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO220AA	2.844	eSMP®	Schottky	60V	1A	590mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
ES1DLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	2.988	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	2.052	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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