Raddrizzatori - Singoli

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 374/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
SFT18G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	8.892	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS210L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SUB SMA	8.334	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	8.280	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	5.076	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	5.256	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	5.328	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	4.680	-	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5.814	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	2.592	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1AB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AA	4.680	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1BB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AA	3.204	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	7.434	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	3.690	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	2.952	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	7.506	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	8.802	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	3.240	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	6.462	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	7.776	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	3.186	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MBHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	2.430	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2KHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	3.546	Automotive, AEC-Q101	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2MHM4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA	3.456	Automotive, AEC-Q101	Standard	-	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CFRA106-G	Comchip Technology	DIODE GEN PURP 800V 1A DO214AC	7.110	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	150°C (Max)
NHP140SFT3G	ON Semiconductor	DIODE GEN PURP 400V 1A SOD123FL	4.410	*	-	-	-	-	-	-	-	-	-	-	-	-
SS2PH5-M3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO220AA	5.472	-	Schottky	50V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 50V	93pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SS2PH5-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 2A DO220AA	6.750	-	Schottky	50V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 50V	93pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SS2PH6-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO220AA	7.668	-	Schottky	60V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 60V	93pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SS2PH6-M3/84A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A DO220AA	7.848	-	Schottky	60V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 60V	93pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SK12-TP	Micro Commercial Co	DIODE SCHOTTKY 20V 1A DO214AA	4.464	-	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-55°C ~ 125°C

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