Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 275/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE SCHOTTKY 20V 2A POWERDI323 |
6.606 |
|
Automotive, AEC-Q101 | Schottky | 20V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 160µA @ 20V | 46pF @ 10V, 1MHz | Surface Mount | PowerDI™ 323 | PowerDI™ 323 | -65°C ~ 125°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A DO221BC |
4.572 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 810pF @ 4V, 1MHz | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | DO-221BC (SMPA) | -40°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 50V 3A DO201AD |
6.714 |
|
- | Schottky | 50V | 3A | 740mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
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|
Micro Commercial Co |
DIODE GEN PURP 50V 10A DO214AB |
3.852 |
|
- | Standard | 50V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 8A TO277A |
2.034 |
|
eSMP® | Schottky | 20V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 330pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
8.640 |
|
- | Standard | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 6A TO277A |
8.370 |
|
- | Standard | 400V | 6A | 1.2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 200V 8A D2PAK |
5.400 |
|
- | Standard | 200V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
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|
Panasonic Electronic Components |
CSP SCHOTTKY BARRIER DIODE |
4.158 |
|
- | Schottky | 40V | 2A | 520mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 14ns | 400µA @ 40V | 47pF @ 10V, 1MHz | Surface Mount | 0404 (1010 Metric) | DCSP1010010-N1 | 150°C (Max) |
|
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|
Sanken |
DIODE SCHOTTKY 60V 2A SJP |
6.390 |
|
- | Schottky | 60V | 2A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AB |
8.046 |
|
- | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 150°C |
|
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SMC Diode Solutions |
DIODE GEN PURP 300V 8A D2PAK |
5.940 |
|
- | Standard | 300V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 300V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
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SMC Diode Solutions |
DIODE GEN PURP 400V 8A D2PAK |
6.948 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
25 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 95pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDTM |
8.856 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
|
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|
Diodes Incorporated |
DIODE GEN PURP 1KV 3A SMC |
3.654 |
|
- | Standard | 1000V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
|
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ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
4.032 |
|
- | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 95pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
6.732 |
|
eSMP® | Standard | 600V | 6A | 2.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 3A DO214AB |
6.588 |
|
- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 175°C |
|
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ON Semiconductor |
DIODE SCHOTTKY 100V 10A 5DFN |
2.016 |
|
- | Schottky | 100V | 10A | 950mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
5.922 |
|
- | Super Barrier | 45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 200V DO-214AB |
8.550 |
|
- | Schottky | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO214AB |
3.114 |
|
- | Standard | 600V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO214AB |
2.592 |
|
- | Standard | 400V | 4A | 1.25V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 4A DO214AB |
5.940 |
|
- | Standard | 200V | 4A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5A DO201AD |
7.074 |
|
- | Schottky | 100V | 5A | 800mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
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|
Comchip Technology |
DIODE SCHOTTKY 100V 3A DO214AA |
7.920 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 125°C (Max) |
|
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SMC Diode Solutions |
DIODE GEN PURP 200V DPAK |
6.354 |
|
- | Standard | 200V | - | 1.15V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 15µA @ 200V | 60pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 150°C |
|
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|
Bourns |
DIODE SCHOTTKY 50V 3A SMA |
8.208 |
|
- | Schottky | 50V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 125°C |
|
|
|
Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
2.394 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 100V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |