Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 262/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Littelfuse |
DIODE GEN PURP 600V 9.5A TO220 |
9.156 |
|
- | Standard | 600V | 9.5A | 1.6V @ 15A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 600V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -40°C ~ 125°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
23.832 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.5V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 600pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220FP |
21.648 |
|
- | Schottky | 100V | 30A | 800mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 175µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FPAB | 150°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
17.232 |
|
- | Silicon Carbide Schottky | 650V | 2.15A (DC) | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 10.8µA @ 650V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 30A TO-247 |
8.556 |
|
FRED Pt® | Standard | 1200V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 113ns | 50µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE FREDS 1200V 30A TO-247 |
7.620 |
|
FRED Pt® | Standard | 1200V | 30A | 3.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2 |
5.688 |
|
- | Silicon Carbide Schottky | 650V | 16A (DC) | 1.35V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 420V | 302pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V TO220-2 |
14.892 |
|
- | Silicon Carbide Schottky | 650V | 8.8A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 361pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
9.384 |
|
Automotive, AEC-Q101, Stealth™ | Standard | 600V | 50A | 1.69V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 163ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
11.928 |
|
- | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 430pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
23.184 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
16.320 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
12.666 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
17.808 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
16.896 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
1.001 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.5V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 400pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO220FM |
19.992 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220FM | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
20.748 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.5V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 600pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
23.712 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
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|
Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO247 |
6.384 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
|
|
Microsemi |
GEN2 SIC SBD 700V 30A D3PAK |
5.670 |
|
- | Silicon Carbide Schottky | 700V | 30A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 175°C |
|
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|
SMC Diode Solutions |
DIODE SCHOTTKY 45V 120A SPD-3A |
6.984 |
|
- | Schottky | 45V | 120A | 660mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4mA @ 45V | 4800pF @ 5V, 1MHz | Surface Mount | SPD-3A | SPD-3A | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 700V 50A TO247 |
6.252 |
|
- | Silicon Carbide Schottky | 700V | 50A (DC) | 1.5V @ 50A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
|
|
Cree/Wolfspeed |
ZRECTM 15A 1200V SIC SCHOTTKY DI |
6.480 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 39A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1.2nF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Microsemi |
GEN2 SIC SBD 700V 50A D3PAK |
7.128 |
|
- | Silicon Carbide Schottky | 700V | 88A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 700V | 2034pF @ 1V, 1MHz | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 175°C |
|
|
|
Microsemi |
UNRLS, FG, GEN2, SIC SBD, TO-268 |
6.324 |
|
- | Silicon Carbide Schottky | 1200V | 50A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | - |
|
|
|
Cree/Wolfspeed |
E SERIES, 20 AMP, 1200V G4 SCHOT |
8.182 |
|
Automotive, AEC-Q101, E | Silicon Carbide Schottky | 1200V | 54.5A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1500pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE MODULE 400V ISOTOP |
6.822 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | SOT-227-4, miniBLOC | ISOTOP | - |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 80V 240A PRM1-1 |
5.346 |
|
- | Schottky | 80V | 240A | 860mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 80V | 5500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 50A TO-247-2 |
6.504 |
|
- | Silicon Carbide Schottky | 1200V | 212A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 3263pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |