Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 248/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 2A TO220-2 |
16.920 |
|
- | Silicon Carbide Schottky | 650V | 2A (DC) | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 10.8µA @ 650V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | - | 175°C (Max) |
|
|
|
Littelfuse |
DIODE GEN PURP 600V 9.5A TO220 |
9.780 |
|
- | Standard | 600V | 9.5A | 1.6V @ 9.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 600V | - | Through Hole | TO-220-3 Isolated Tab | TO-220 Isolated Tab | -40°C ~ 125°C |
|
|
|
Littelfuse |
DIODE GEN PURP 600V 12.7A TO220 |
8.448 |
|
- | Standard | 600V | 12.7A | - | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 600V | - | Through Hole | TO-220-3 Isolated Tab | TO-220AB-L | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 150MA DO35 |
7.164 |
|
- | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 100V 30A TO220AB |
20.880 |
|
- | Schottky | 100V | 30A | 870mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 45µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
|
|
|
SMC Diode Solutions |
DIODE GEN PURP 600V 60A TO247AC |
6.120 |
|
- | Standard | 600V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 30V 30A DIE |
20.148 |
|
- | Schottky | 30V | 30A | 490mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 30V | 2200pF @ 5V, 1MHz | Surface Mount | Die | Die | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A TO220FP |
16.668 |
|
- | Standard | 600V | 15A | 2.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 60µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A TO220FP |
17.592 |
|
- | Standard | 600V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 15µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 30A TO247AD |
16.548 |
|
- | Standard | 600V | 30A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 30A TO263 |
6.168 |
|
- | Standard | 1200V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1200V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220LNS |
19.260 |
|
- | Standard | 1200V | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 1200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 30A TO247AD |
8.334 |
|
- | Standard | 200V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 15V 25A TO220-2 |
7.380 |
|
SWITCHMODE™ | Schottky | 15V | 25A | 450mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15mA @ 15V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AD |
10.500 |
|
FRED Pt® | Standard | 600V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Littelfuse |
DIODE GEN PURP 600V 15.9A TO220 |
6.924 |
|
- | Standard | 600V | 15.9A | - | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 600V | - | Through Hole | TO-220-3 Isolated Tab | TO-220AB-L | -40°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
4.195 |
|
- | Standard | 600V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 100V 30A DIE |
6.156 |
|
- | Schottky | 100V | 30A | 840mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 750µA @ 100V | 1000pF @ 5V, 1MHz | Surface Mount | Die | Die | 200°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 20A TO220AC |
6.516 |
|
- | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 30A DO247 |
7.704 |
|
Automotive, AEC-Q101, ECOPACK®2 | Standard | 1200V | 30A | 1.3V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 71A TO220-2 |
9.396 |
|
- | Standard | 600V | 71A (DC) | 2V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 30V 30A DIE |
6.420 |
|
- | Schottky | 30V | 30A | 490mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 30V | 2200pF @ 5V, 1MHz | Surface Mount | Die | Die | 150°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 15A DO247 |
17.208 |
|
- | Standard | 1200V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3 |
8.262 |
|
- | Standard | 650V | 80A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
8.280 |
|
- | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 300V 60A TO247-3 |
5.346 |
|
- | Standard | 300V | 60A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | TO-247-3 | TO-247-3 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 12A DO203AA |
659 |
|
- | Standard | 200V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 60A TO247 |
532 |
|
- | Standard | 1000V | 60A | 3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 255ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GP 1.6KV 48A ISOPLUS247 |
1 |
|
- | Standard | 1600V | 48A | 1.18V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 3mA @ 1600V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 25A DO203AA |
5.364 |
|
- | Standard, Reverse Polarity | 400V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |