Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 130/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
14.220 |
|
FRED Pt® | Standard | 600V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2-1 |
17.988 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 650V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 8A TO220-2 |
16.086 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 16.5A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | Through Hole | TO-220-2 Isolated Tab | TO-220-2 Isolated Tab | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 600V 6A TO220AC |
6.528 |
|
- | Silicon Carbide Schottky | 600V | 6A | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 6A TO-220-2 |
4.372 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 6A (DC) | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO220AC |
18.048 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 8A TO220-2 |
8.328 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.95V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
8.328 |
|
- | Standard | 1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
5.796 |
|
- | Standard | 600V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO-220-2 |
21.120 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
690 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 600V 8A TO220AC |
18.282 |
|
- | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 345pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 1.2KV 20A D2PAK |
15.966 |
|
ECOPACK®2 | Silicon Carbide Schottky | 1200V | 20A | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 1650pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO220FM |
15.840 |
|
- | Silicon Carbide Schottky | 650V | 12A | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE SCHTKY 650V 20A TO220AC |
4.074 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 600V | 1250pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 60A DO247 |
17.448 |
|
Q Automotive | Standard | 1000V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
9.084 |
|
FRED Pt® | Standard | 400V | 60A | 1.25V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
12.708 |
|
FRED Pt® | Standard | 400V | 60A | 1.25V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 6A DO4 |
15.732 |
|
- | Standard | 200V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 6A DO4 |
20.004 |
|
- | Standard | 400V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4 |
15.348 |
|
- | Standard | 50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 6A DO4 |
22.548 |
|
- | Standard, Reverse Polarity | 400V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 6A DO4 |
22.992 |
|
- | Standard, Reverse Polarity | 50V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 6A DO4 |
20.748 |
|
- | Standard, Reverse Polarity | 200V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 15µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
10.200 |
|
- | Standard | 1200V | 30A | 1.41V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
8.172 |
|
FRED Pt® | Standard | 600V | 60A | 1.68V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 81ns | 50µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 35A DO203AB |
7.968 |
|
- | Standard | 200V | 35A | 1.7V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
9.084 |
|
- | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTKY 650V 20A TO220-2-1 |
10.176 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
52 |
|
- | Standard | 400V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |