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Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1144/1165
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
GPA805DT-TP
Micro Commercial Co
DIODE GPP 8A D2PAK
8.136
-
Standard
600V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
GPA806DT-TP
Micro Commercial Co
DIODE GPP 8A D2PAK
8.082
-
Standard
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
GPA807DT-TP
Micro Commercial Co
DIODE GPP 8A D2PAK
4.680
-
Standard
1kV
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
GPA801-BP
Micro Commercial Co
DIODE GPP 8A TO220AC
8.712
-
Standard
50V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220AC
-65°C ~ 150°C
GPA802-BP
Micro Commercial Co
DIODE GPP 8A TO220AC
2.808
-
Standard
100V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220AC
-65°C ~ 150°C
GPA803-BP
Micro Commercial Co
DIODE GPP 8A TO220AC
4.860
-
Standard
200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220AC
-65°C ~ 150°C
GPA804-BP
Micro Commercial Co
DIODE GPP 8A TO220AC
3.996
-
Standard
400V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220AC
-65°C ~ 150°C
GPA805-BP
Micro Commercial Co
DIODE GPP 8A TO220AC
7.020
-
Standard
600V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220AC
-65°C ~ 150°C
GPA806-BP
Micro Commercial Co
DIODE GPP 8A TO220AC
4.752
-
Standard
800V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220AC
-65°C ~ 150°C
GPA807-BP
Micro Commercial Co
DIODE GPP 8A TO220AC
8.640
-
Standard
1kV
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
50pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220AC
-65°C ~ 150°C
CTLSH1-40M832DS BK
Central Semiconductor Corp
SCHOTTKY RECTIFIER SMT
5.292
-
Schottky
40V
1A (DC)
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
50pF @ 4V, 1MHz
Surface Mount
8-TDFN Exposed Pad
TLM832DS
-65°C ~ 150°C
CTLSH1-40M832DS TR
Central Semiconductor Corp
SCHOTTKY RECTIFIER SMT
4.950
-
Schottky
40V
1A (DC)
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
50pF @ 4V, 1MHz
Surface Mount
8-TDFN Exposed Pad
TLM832DS
-65°C ~ 150°C
CTLSH1-50M832DS BK
Central Semiconductor Corp
SCHOTTKY RECTIFIER SMT
7.902
-
Schottky
50V
1A (DC)
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
50pF @ 4V, 1MHz
Surface Mount
8-TDFN Exposed Pad
TLM832DS
-65°C ~ 150°C
CTLSH1-50M832DS TR
Central Semiconductor Corp
SCHOTTKY RECTIFIER SMT
2.826
-
Schottky
50V
1A (DC)
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
50pF @ 4V, 1MHz
Surface Mount
8-TDFN Exposed Pad
TLM832DS
-65°C ~ 150°C
JANTX1N3647
Semtech
D MET 250MA STD 3KV HR
2.160
*
-
-
-
-
-
-
-
-
-
-
-
-
DD171N16KKHOSA1
Infineon Technologies
THYR / DIODE MODULE DK
8.928
-
-
-
-
-
-
-
-
-
-
-
-
-
DZ600N16KB01HPSA1
Infineon Technologies
THYR / DIODE MODULE DK
5.148
-
Standard
1800V
735A
-
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 1800V
-
Chassis Mount
Module
BG-PB501-1
150°C (Max)
BYC75W-1200PQ
WeEn Semiconductors
STANDARD MARKING * HORIZONTAL, R
2.016
-
Standard
1200V
75A
-
Fast Recovery =< 500ns, > 200mA (Io)
85ns
250µA @ 1200V
-
Through Hole
TO-247-2
TO-247-2
175°C (Max)
OB2003/001V
WeEn Semiconductors
OB2003/001V/NAU000/NO MARK*CHIPS
4.914
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10BE-075E3/93
Vishay Semiconductor Diodes Division
RECTIFIER
2.376
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10GE-110BE3/93
Vishay Semiconductor Diodes Division
RECTIFIER
5.346
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10GE-110E3/91
Vishay Semiconductor Diodes Division
RECTIFIER
2.160
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10GE-110E3/93
Vishay Semiconductor Diodes Division
RECTIFIER
7.434
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10GE-124E3/91
Vishay Semiconductor Diodes Division
RECTIFIER
2.718
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10GE-159E3/93
Vishay Semiconductor Diodes Division
RECTIFIER
2.106
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10GE-161E3/91
Vishay Semiconductor Diodes Division
RECTIFIER
2.682
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10GE-167E3/93
Vishay Semiconductor Diodes Division
RECTIFIER
6.786
-
-
-
-
-
-
-
-
-
-
-
-
-
GP10KE-046E3/93
Vishay Semiconductor Diodes Division
RECTIFIER
5.310
-
-
-
-
-
-
-
-
-
-
-
-
-
GPP60B-001HE3/54
Vishay Semiconductor Diodes Division
RECTIFIER
3.060
Automotive, AEC-Q101
Standard
100V
6A
-
Standard Recovery >500ns, > 200mA (Io)
5.5µs
5µA @ 100V
110pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-55°C ~ 175°C
GPP60G-01HE3/54
Vishay Semiconductor Diodes Division
RECTIFIER
5.418
Automotive, AEC-Q101
Standard
400V
6A
-
Standard Recovery >500ns, > 200mA (Io)
5.5µs
5µA @ 400V
110pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-55°C ~ 175°C