Raddrizzatori - Singoli

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

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Capacità @ Vr, F

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Tipo di montaggio

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

Record 34.936

Pagina 1033/1165

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
MBRF10H90HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ITO-220AC	6.732	*	-	-	-	-	-	-	-	-	-	-	-	-
MBRF1650-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ITO-220AC	5.724	*	-	-	-	-	-	-	-	-	-	-	-	-
MBRF1650HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ITO-220AC	7.074	*	-	-	-	-	-	-	-	-	-	-	-	-
MBRF16H35-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ITO-220AC	2.898	*	-	-	-	-	-	-	-	-	-	-	-	-
MBRF16H50-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ITO-220AC	6.498	*	-	-	-	-	-	-	-	-	-	-	-	-
MBRF16H50HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ITO-220AC	4.266	*	-	-	-	-	-	-	-	-	-	-	-	-
SBLB1030-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY DUAL TO-263AB	8.838	*	-	-	-	-	-	-	-	-	-	-	-	-
SBLB1030HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY DUAL TO-263AB	6.264	*	-	-	-	-	-	-	-	-	-	-	-	-
IDP23011XUMA1	Infineon Technologies	AC/DC DIGITAL PLATFORM	3.114	*	-	-	-	-	-	-	-	-	-	-	-	-
IDB06S60CATMA2	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO263-3-2	4.410	CoolSiC™+	Silicon Carbide Schottky	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2	-
IDB10S60CATMA2	Infineon Technologies	DIODE SCHOTTKY 600V 10A D2PAK	3.672	CoolSiC™+	Silicon Carbide Schottky	600V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	140µA @ 600V	480pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
VS-15TQ060STRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 15A D2PAK	6.228	-	Schottky	60V	15A	620mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 60V	720pF @ 5V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
VS-20ETF06STRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 20A D2PAK	3.888	-	Standard	600V	20A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	100µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
VS-20ETS08STRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 20A TO263AB	6.498	-	Standard	800V	20A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 800V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-40°C ~ 150°C
VS-20ETS12STRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 20A D2PAK	7.920	-	Standard	1200V	20A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1200V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 150°C
VS-MURB1520TRLPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 15A D2PAK	6.642	FRED Pt®	Standard	200V	15A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	10µA @ 200V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
CLH01(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT	8.532	-	Standard	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT	7.668	-	Standard	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH02(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT	6.840	-	Standard	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH02(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT	4.986	-	Standard	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH03(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT	2.070	-	Standard	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH03(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT	4.194	-	Standard	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH05(T6L,NKOD,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	2.772	-	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	6.372	-	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05,LMBJQ(O	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	4.752	-	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH06(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT	6.354	-	Standard	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH06(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT	6.210	-	Standard	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH07(TE16L,NMB,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT	7.020	-	Standard	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH07(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT	4.770	-	Standard	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLS01(T6LSONY,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	3.454	-	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C

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