Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 1005/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
3.798 |
|
Automotive, AEC-Q101 | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO220AC |
4.284 |
|
Automotive, AEC-Q101 | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO220AC |
5.544 |
|
Automotive, AEC-Q101 | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
2.610 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 16A TO220AC |
7.164 |
|
- | Standard | 500V | 16A | 1.5V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | 145pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 16A TO220AC |
5.400 |
|
- | Standard | 600V | 16A | 1.5V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 145pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 8A TO220AC |
2.268 |
|
- | Standard | 500V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
2.556 |
|
- | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204AL |
2.250 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 2000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204AL |
4.716 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 2000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 250MA DO204AL |
3.276 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 4000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 4000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 250MA DO204AL |
5.202 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 4000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 4000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO263AB |
3.526 |
|
Automotive, AEC-Q101 | Schottky | 60V | 7.5A | 730mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO263AB |
7.902 |
|
Automotive, AEC-Q101 | Schottky | 60V | 7.5A | 730mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO263AB |
2.574 |
|
Automotive, AEC-Q101 | Schottky | 60V | 7.5A | 730mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 5A TO220AC |
4.662 |
|
- | Standard | 500V | 5A | 1.75V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 500V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A TO220AC |
5.436 |
|
- | Standard | 600V | 5A | 1.75V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 8A TO220AC |
4.968 |
|
- | Standard | 500V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 500V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
4.194 |
|
- | Standard | 600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 80A DO247 |
2.916 |
|
- | Standard | 600V | 80A | 2.2V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GPP ULT FAST 1A CHIP 1=400 |
3.996 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DIE 1=400 |
3.636 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GP GPP 1A CHIP FORM 1=400 |
2.844 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE GP 100V 200MA DIE 1=400 |
4.032 |
|
- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | Die | Die | -65°C ~ 150°C |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 650V 10A DPAK |
7.632 |
|
- | Schottky | 650V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 125µA @ 650V | 28pF @ 600V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 650V 10A DPAK |
3.780 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 125µA @ 650V | 325pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
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|
Central Semiconductor Corp |
DIODE GEN PURP 100V 150MA DO35 |
7.740 |
|
- | Standard | 100V | 150mA | 1V @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
3.276 |
|
- | Standard | 400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
6.822 |
|
- | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
6.894 |
|
- | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |