Raddrizzatori - Array
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Array
Record 11.588
Pagina 205/387
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Configurazione diodi | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media rettificata (Io) (per diodo) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Temperatura di esercizio - Giunzione | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Phoenix Contact |
DIODE MODULE 1.3KV 700MA |
2.322 |
|
- | 7 Common Cathode | Standard | 1300V | 700mA | - | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1300V | -55°C ~ 150°C | DIN Rail/Channel | Module | Module |
|
|
|
Phoenix Contact |
DIODE MODULE 1KV |
4.428 |
|
- | 4 Common Cathode | Standard | 1000V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | -20°C ~ 50°C | DIN Rail | Module | Module |
|
|
|
Phoenix Contact |
DIODE MODULE 1KV |
4.266 |
|
- | 14 Common Anode | Standard | 1000V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | -20°C ~ 50°C | DIN Rail | Module | Module |
|
|
|
Infineon Technologies |
DIODE MODULE GP 1600V 25A |
7.794 |
|
- | 3 Independent | Standard | 1600V | 25A (DC) | 1.3V @ 1600A | Standard Recovery >500ns, > 200mA (Io) | - | 5mA @ 1600V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 120A 2TOWER |
7.128 |
|
- | 1 Pair Common Anode | Schottky | 100V | 120A (DC) | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 120A 2TOWER |
2.070 |
|
- | 1 Pair Common Cathode | Schottky | 100V | 120A (DC) | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
Microsemi |
DIODE MODULE 600V 60A ISOTOP |
6.804 |
|
- | 2 Independent | Silicon Carbide Schottky | 600V | 60A | 1.8V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 1.2mA @ 600V | - | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® |
|
|
|
Microsemi |
DIODE MODULE 600V 60A SOT227 |
6.138 |
|
- | 2 Independent | Silicon Carbide Schottky | 600V | 60A | 1.8V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 1.2mA @ 600V | - | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 2TOWER |
2.034 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 200A (DC) | 650mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 2TOWER |
5.436 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 200A (DC) | 840mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 300A 2TOWER |
8.550 |
|
- | 1 Pair Common Anode | Schottky | 100V | 300A (DC) | 840mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 300A 2TOWER |
3.096 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 300A (DC) | 650mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 45V 300A 2TOWER |
127 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 300A (DC) | 650mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 300A 2TOWER |
2.232 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 300A (DC) | 840mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
IXYS |
DIODE MODULE 1.6KV 200A |
7.488 |
|
- | 1 Pair Series Connection | Standard | 1600V | 200A | 1.13V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 200µA @ 1600V | - | - | Module | Module |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 3TOWER |
8.226 |
|
- | 1 Pair Common Anode | Schottky | 35V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 40V 200A 3TOWER |
3.508 |
|
- | 1 Pair Common Anode | Schottky, Reverse Polarity | 40V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 3TOWER |
3.960 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 30V 200A 2TOWER |
7.020 |
|
- | 1 Pair Common Cathode | Schottky | 30V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 30V 200A 2TOWER |
3.780 |
|
- | 1 Pair Common Anode | Schottky | 30V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 200A 2TOWER |
2.250 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 20V 200A 2TOWER |
3.330 |
|
- | 1 Pair Common Anode | Schottky | 20V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 2TOWER |
2.178 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 200A 2TOWER |
8.604 |
|
- | 1 Pair Common Anode | Schottky | 35V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 40V 200A 2TOWER |
6.552 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 40V 200A 2TOWER |
3.006 |
|
- | 1 Pair Common Anode | Schottky | 40V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 45V 200A 2TOWER |
7.470 |
|
- | 1 Pair Common Anode | Schottky | 45V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 2TOWER |
7.758 |
|
- | 1 Pair Common Anode | Schottky | 80V | 200A (DC) | 840mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A 3TOWER |
4.122 |
|
- | 1 Pair Common Anode | Schottky, Reverse Polarity | 100V | 200A (DC) | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 20V 200A 3TOWER |
6.138 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |