Rohm Semiconductor Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreRohm Semiconductor
Record 814
Pagina 20/28
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Rohm Semiconductor |
RF4L055GN IS A POWER MOSFET WITH |
8.838 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2.7V @ 1mA | 7.8nC @ 10V | ±20V | 400pF @ 30V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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Rohm Semiconductor |
NCH 600V 4A POWER MOSFET. POWER |
7.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | ±20V | 250pF @ 25V | - | 59W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
R6007JND3 IS A POWER MOSFET WITH |
7.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5nC @ 15V | ±30V | 475pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RD3G600GN IS A POWER MOSFET WITH |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Ta) | 4.5V, 10V | 3.6mOhm @ 60A, 10V | 2.5V @ 1mA | 46.5nC @ 10V | ±20V | 3400pF @ 20V | - | 40W (Ta) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RS1E301GN IS A POWER MOSFET WITH |
5.760 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 80A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.5V @ 1mA | 39.8nC @ 10V | ±20V | 2500pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RS1L145GN IS THE HIGH RELIABILIT |
8.460 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14.5A (Ta), 47A (Tc) | 4.5V, 10V | 9.7mOhm @ 14.5A, 10V | 2.7V @ 200µA | 37nC @ 10V | ±20V | 1880pF @ 30V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RD3P200SN IS A POWER MOSFET WITH |
5.490 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 4V, 10V | 46mOhm @ 20A, 10V | 2.5V @ 1mA | 55nC @ 10V | ±20V | 2100pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 6A POWER MOSFET. R6006 |
2.718 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 830mOhm @ 3A, 10V | 5.5V @ 1mA | 12nC @ 10V | ±20V | 350pF @ 25V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RJ1G08CGN IS A POWER MOSFET WITH |
6.552 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 4.5V, 10V | 5.6mOhm @ 80A, 10V | 2.5V @ 500µA | 31.1nC @ 10V | ±20V | 2410pF @ 20V | - | 78W (Ta) | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 7A POWER MOSFET. POWER |
2.826 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 62mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | ±20V | 390pF @ 25V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 6A POWER MOSFET. R6006 |
8.406 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 15V | 936mOhm @ 3A, 15V | 7V @ 800µA | 15.5nC @ 15V | ±30V | 410pF @ 100V | - | 86W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 9A POWER MOSFET. POWER |
3.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 535mOhm @ 2.8A, 10V | 4V @ 1mA | 23nC @ 10V | ±20V | 430pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 650V 4A POWER MOSFET. R6504 |
2.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 1.05Ohm @ 1.5A, 10V | 4V @ 130µA | 15nC @ 10V | ±20V | 220pF @ 25V | - | 58W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 4A POWER MOSFET. R6504 |
5.202 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 1.05Ohm @ 1.5A, 10V | 5V @ 130µA | 10nC @ 10V | ±20V | 270pF @ 25V | - | 58W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
R6009JND3 IS A POWER MOSFET WITH |
8.496 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
4.5V DRIVE NCH MOSFET. POWER MOS |
7.830 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 1.7mOhm @ 35A, 10V | 2.5V @ 1mA | 68nC @ 10V | ±20V | 4060pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RQ3P300BE IS A POWER MOSFET WITH |
6.588 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 36A (Tc) | 10V | 21mOhm @ 10A, 10V | 4V @ 200µA | 19.1nC @ 10V | ±20V | 1250pF @ 50V | - | 2W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
RS1E220AT IS A POWER MOSFET, SUI |
3.508 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 76A (Tc) | 4.5V, 10V | 4.1mOhm @ 22A, 10V | 2.5V @ 2mA | 130nC @ 10V | ±20V | 5850pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RS3E180AT IS A POWER MOSFET FOR |
7.920 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 5.4mOhm @ 18A, 10V | 2.5V @ 5mA | 160nC @ 10V | ±20V | 7200pF @ 15V | - | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
RSJ451N04FRAIS THE HIGH RELIABIL |
3.222 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Tc) | 10V | 13.5mOhm @ 25A, 10V | 3V @ 1mA | 43nC @ 10V | ±20V | 2400pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
RJ1G08CGN IS A POWER MOSFET WITH |
5.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Ta) | 4.5V, 10V | 7.7mOhm @ 80A, 10V | 2.5V @ 50µA | 55nC @ 10V | ±20V | 2600pF @ 30V | - | 96W (Ta) | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 6A POWER MOSFET. R6006 |
4.536 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 15V | 936mOhm @ 3A, 15V | 7V @ 800µA | 15.5nC @ 15V | ±30V | 410pF @ 100V | - | 43W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Rohm Semiconductor |
R6007JNJ IS A POWER MOSFET WITH |
6.228 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5nC @ 15V | ±30V | 475pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 11A POWER MOSFET. POWE |
3.366 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 5V @ 1mA | 22nC @ 10V | ±20V | 740pF @ 25V | - | 124W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 600V 11A POWER MOSFET. POWE |
3.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 4V @ 1mA | 32nC @ 10V | ±20V | 670pF @ 25V | - | 124W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RD3P08BBD IS A POWER MOSFET WITH |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Ta) | 6V, 10V | 11.6mOhm @ 80A, 10V | 4V @ 1mA | 37nC @ 10V | ±20V | 1940pF @ 50V | - | 119W (Ta) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RS1P600BE IS A POWER MOSFET WITH |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17.5A (Ta), 60A (Tc) | 10V | 9.7mOhm @ 17.5A, 10V | 4V @ 500µA | 33nC @ 10V | ±20V | 2200pF @ 50V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
R6009JNJ IS A POWER MOSFET WITH |
5.022 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | LPTS (D2PAK) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 7A POWER MOSFET. R6507 |
5.940 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 5V @ 200µA | 14.5nC @ 10V | ±20V | 470pF @ 25V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 7A POWER MOSFET. R6507 |
7.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 665mOhm @ 2.4A, 10V | 4V @ 200µA | 20nC @ 10V | ±20V | 390pF @ 25V | - | 78W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |