ON Semiconductor Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreON Semiconductor
Record 2.271
Pagina 50/76
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
3.330 |
|
- | Standard | 1200V | - | 1.8V @ 35A | - | - | 1µA @ 1200V | - | Surface Mount | Die | Die | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1.2KV DIE |
4.590 |
|
- | Standard | 1200V | - | 1.8V @ 35A | - | - | 1µA @ 1200V | - | Surface Mount | Die | Die | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO220-2 |
3.132 |
|
Automotive, AEC-Q101 | Standard | 600V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 4A SIC SBD |
5.346 |
|
- | Silicon Carbide Schottky | 650V | 7.6A (DC) | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 258pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
UFR TO220 15A 1000V AUTO |
4.158 |
|
- | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 15A TO220AC |
4.716 |
|
Automotive, AEC-Q101 | Standard | 1000V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO220AC |
8.172 |
|
Automotive, AEC-Q101, Stealth™ | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 6A SIC SBD |
5.508 |
|
- | Silicon Carbide Schottky | 650V | 11A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 361pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
SIC DIODE 650V 4A |
6.246 |
|
- | Silicon Carbide Schottky | 650V | 4A | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 247pF @ 1V, 100kHz | Surface Mount | 4-PowerTSFN | 4-PQFN (8x8) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 4A SIC SBD |
5.724 |
|
- | Silicon Carbide Schottky | 650V | 7.7A (DC) | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200mA @ 650V | 258pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK-2 (TO-263-2) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 6A SIC SBD |
5.922 |
|
- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 361pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SBD 6A 650V D2PAK-3 |
2.088 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
650V 8A SIC SBD |
8.640 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
SIC DIODE 650V |
3.366 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 1KV 80A TO247-2 |
5.184 |
|
Automotive, AEC-Q101 | Standard | 1000V | 80A | 1.9V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 250µA @ 80V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO247-2 |
4.014 |
|
Automotive, AEC-Q101 | Standard | 600V | 15A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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|
|
ON Semiconductor |
DIODE SBD 650V 8A 4PQFN |
7.344 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
650V 4A SIC SBD |
4.032 |
|
- | Silicon Carbide Schottky | 650V | 8.6A (DC) | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200mA @ 650V | 258pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 8A SIC SBD |
8.064 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 463pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO247 |
7.686 |
|
Automotive, AEC-Q101, Stealth™ | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO247-2 |
4.500 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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|
|
ON Semiconductor |
DIODE SBD 8A 650V D2PAK-3 |
3.420 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV TO220-2 |
5.886 |
|
- | Silicon Carbide Schottky | 1200V | - | 1.75V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | - | Through Hole | TO-220-2 | TO-220-2L | - |
|
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ON Semiconductor |
DIODE SBD 650V 4PQFN |
8.226 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
ON Semiconductor |
DIODE SBD 10A 650V D2PAK-3 |
7.812 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
SIC DIODE 650V |
4.428 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 866pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
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ON Semiconductor |
DIODE SBD 12A 650V D2PAK-3 |
7.020 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
SIC DIODE 650V |
8.442 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 23.6A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK-3 (TO-263-3) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
2.790 |
|
Automotive, AEC-Q101 | Standard | 600V | 50A | 2.1V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SBD 10A 120V D2PAK-3 |
5.798 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |