ON Semiconductor Raddrizzatori - Singoli
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreON Semiconductor
Record 2.271
Pagina 23/76
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 400V 60A TO247 |
9.864 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247 | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 15A TO220-2 |
16.872 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 10A SIC SBD |
23.856 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 10A AUTO SIC SBD |
18.960 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 21A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 15A TO220-2 |
16.188 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.75V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 665pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
13.692 |
|
- | Silicon Carbide Schottky | 1200V | 8A (DC) | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 538pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
SIC DIODE 650V |
11.124 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 866pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 20A SIC SBD GEN1.5 |
9.168 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
2.532 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.75V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 16A TO220-2 |
14.688 |
|
- | Silicon Carbide Schottky | 650V | 16A (DC) | 1.75V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 16A SIC SBD |
9.324 |
|
- | Silicon Carbide Schottky | 650V | 23A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 25A TO220-2 |
15.396 |
|
- | Silicon Carbide Schottky | 650V | 25A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 20A SIC SBD |
22.428 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 15A TO220-2 |
19.344 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.75V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 936pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 20A SIC SBD |
11.004 |
|
- | Silicon Carbide Schottky | 650V | 25A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 15A SIC SBD |
8.028 |
|
- | Silicon Carbide Schottky | 1200V | 26A (DC) | 1.75V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 936pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 30A TO220-2 |
14.244 |
|
- | Silicon Carbide Schottky | 650V | 30A (DC) | 1.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 650V | 1705pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 30A SIC SBD |
9.720 |
|
- | Silicon Carbide Schottky | 650V | 26A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1705pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
SIC DIODE TO247 650V |
9.108 |
|
- | Silicon Carbide Schottky | 650V | 60A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 2530pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 10A AUTO SIC SBD |
9.276 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 17A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
9.744 |
|
- | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-2 | TO-247-2 | - |
|
|
|
ON Semiconductor |
650V 40A SIC SBD |
10.980 |
|
- | Silicon Carbide Schottky | 650V | 48A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1989pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 30A SIC SBD GEN1.5 |
10.776 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 37A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 1260pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 50A SIC SBD |
10.632 |
|
- | Silicon Carbide Schottky | 650V | 60A (DC) | 1.75V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 2530pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 20A AUTO SIC SBD |
11.028 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 30A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 40A AUTO SIC SBD |
8.712 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 25A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD523F |
2.866.362 |
|
- | Schottky | 30V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 10V | - | Surface Mount | SC-79, SOD-523F | SOD-523F | -55°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 40V 30MA SOD523F |
2.008.002 |
|
- | Schottky | 40V | 30mA | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 10V | - | Surface Mount | SC-79, SOD-523F | SOD-523F | -55°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 120V 200MA SOT23 |
86.496 |
|
- | Standard | 120V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 120V 200MA SOT23 |
82.122 |
|
- | Standard | 120V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |