Microsemi Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 5/86
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO213AA |
17.832 |
|
- | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 150MA DO35 |
7.164 |
|
- | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
8.280 |
|
- | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 60A TO247 |
532 |
|
- | Standard | 1000V | 60A | 3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 255ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A B-MELF |
1.848 |
|
- | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
7.664 |
|
- | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 2.5A AXIAL |
8.208 |
|
- | Standard | 150V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | - | Through Hole | A, Axial | - | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 600V 15A TO247 |
10.128 |
|
- | Standard | 600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-247-3 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 300V 30A TO247 |
5.526 |
|
- | Standard | 300V | 30A | 1.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 250µA @ 300V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A D5A |
17 |
|
- | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 3A AXIAL |
164 |
|
- | Standard | 800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A D5A |
6.876 |
|
- | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 3A B-MELF |
6.768 |
|
- | Standard | 800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 1A AXIAL |
6.276 |
|
- | Standard | 100V | 1A | 975mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | - | Through Hole | A, Axial | - | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 500MA D5A |
6.060 |
|
- | Standard | 600V | 500mA (DC) | 1V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 2.5A A-MELF |
7.452 |
|
- | Standard | 100V | 2.5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | 3.5pF @ 6V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | 150°C (Max) |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO247 |
6.384 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
|
|
Microsemi |
GEN2 SIC SBD 700V 30A D3PAK |
5.670 |
|
- | Silicon Carbide Schottky | 700V | 30A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE SCHOTTKY 700V 50A TO247 |
6.252 |
|
- | Silicon Carbide Schottky | 700V | 50A (DC) | 1.5V @ 50A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
|
|
|
Microsemi |
GEN2 SIC SBD 700V 50A D3PAK |
7.128 |
|
- | Silicon Carbide Schottky | 700V | 88A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 700V | 2034pF @ 1V, 1MHz | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 175°C |
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|
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Microsemi |
UNRLS, FG, GEN2, SIC SBD, TO-268 |
6.324 |
|
- | Silicon Carbide Schottky | 1200V | 50A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | - |
|
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Microsemi |
DIODE GEN PURP 200V 2A POWERMITE |
6.714 |
|
- | Standard | 200V | 2A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
|
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|
Microsemi |
DIODE SCHOTTKY 45V 3A DO214AB |
3.582 |
|
- | Schottky | 45V | 3A | 520mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 85V 200MA DO35 |
11.100 |
|
- | Standard | 85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 85V 200MA DO35 |
6.228 |
|
- | Standard | 85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 200MA DO35 |
5.544 |
|
Military, MIL-PRF-19500/231 | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
UFR,FRR |
3.600 |
|
- | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A |
8.820 |
|
Military, MIL-PRF-19500/228 | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
6.576 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 1A |
5.796 |
|
Military, MIL-PRF-19500/427 | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |