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Microsemi Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 41/86
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
JANTXV1N6075
Microsemi
DIODE GEN PURP 150V 850MA AXIAL
3.906
Military, MIL-PRF-19500/503
Standard
150V
850mA
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 150V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 155°C
JANTXV1N6073
Microsemi
DIODE GEN PURP 50V 850MA AXIAL
2.412
Military, MIL-PRF-19500/503
Standard
50V
850mA
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 50V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 155°C
1N5302UR-1
Microsemi
CURRENT REGULATOR DIODE
12
*
-
-
-
-
-
-
-
-
-
-
-
-
R25100
Microsemi
RECTIFIER
8.820
*
-
-
-
-
-
-
-
-
-
-
-
-
R25120
Microsemi
RECTIFIER
7.074
*
-
-
-
-
-
-
-
-
-
-
-
-
R25140
Microsemi
RECTIFIER
5.292
*
-
-
-
-
-
-
-
-
-
-
-
-
R25160
Microsemi
RECTIFIER
7.884
*
-
-
-
-
-
-
-
-
-
-
-
-
R2540
Microsemi
RECTIFIER
5.652
*
-
-
-
-
-
-
-
-
-
-
-
-
R2560
Microsemi
RECTIFIER
8.820
*
-
-
-
-
-
-
-
-
-
-
-
-
R2580
Microsemi
RECTIFIER
4.698
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N3646
Microsemi
DIODE GP 1.75KV 250MA AXIAL
3.114
Military, MIL-PRF-19500/279
Standard
1750V
250mA
5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1750V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 175°C
JANTXV1N6620US
Microsemi
DIODE GEN PURP 220V 1.2A D5A
5.634
Military, MIL-PRF-19500/585
Standard
220V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 220V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JAN1N6076
Microsemi
DIODE GEN PURP 50V 1.3A AXIAL
4.392
Military, MIL-PRF-19500/503
Standard
50V
1.3A
1.76V @ 18.8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
-
Through Hole
E, Axial
E-PAK
-65°C ~ 155°C
JAN1N6077
Microsemi
DIODE GEN PURP 100V 1.3A AXIAL
6.966
Military, MIL-PRF-19500/503
Standard
100V
1.3A
1.76V @ 18.8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
-
Through Hole
E, Axial
E-PAK
-65°C ~ 155°C
JANTXV1N5552US
Microsemi
DIODE GEN PURP 600V 3A B-MELF
5.904
Military, MIL-PRF-19500/420
Standard
600V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 600V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JAN1N6628US
Microsemi
DIODE GEN PURP 660V 1.75A D5B
2.100
Military, MIL-PRF-19500/590
Standard
660V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 660V
40pF @ 10V, 1MHz
Surface Mount
E-MELF
D-5B
-65°C ~ 150°C
JAN1N6629US
Microsemi
DIODE GEN PURP 880V 1.4A D5B
6.156
Military, MIL-PRF-19500/590
Standard
880V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
2µA @ 880V
40pF @ 10V, 1MHz
Surface Mount
E-MELF
D-5B
-65°C ~ 150°C
JAN1N6630US
Microsemi
DIODE GEN PURP 900V 1.4A E-MELF
2.016
Military, MIL-PRF-19500/590
Standard
900V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
2µA @ 900V
-
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
JAN1N6631US
Microsemi
DIODE GEN PURP 1.1KV 1.4A D5B
6.588
Military, MIL-PRF-19500/590
Standard
1100V
1.4A
1.6V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
4µA @ 1100V
40pF @ 10V, 1MHz
Surface Mount
E-MELF
D-5B
-65°C ~ 150°C
JANTX1N6631US
Microsemi
DIODE GEN PURP 1.1KV 1.4A D5B
8.478
Military, MIL-PRF-19500/590
Standard
1100V
1.4A
1.6V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
4µA @ 1100V
40pF @ 10V, 1MHz
Surface Mount
E-MELF
D-5B
-65°C ~ 150°C
1N6076US
Microsemi
DIODE GEN PURP 50V 6A D5B
4.554
-
Standard
50V
6A
1.76V @ 18.8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
-
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 155°C
1N6077US
Microsemi
DIODE GEN PURP 100V 6A D5B
7.884
-
Standard
100V
6A
1.76V @ 18.8A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 100V
-
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 155°C
1N5711UB
Microsemi
SCHOTTKY DIODE
6.066
*
-
-
-
-
-
-
-
-
-
-
-
-
1N5712UB
Microsemi
SCHOTTKY DIODE
7.182
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N5552US
Microsemi
DIODE GEN PURP 600V 5A B-MELF
5.112
Military, MIL-PRF-19500/420
Standard
600V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 600V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
USD245
Microsemi
RECTIFIER
7.218
*
-
-
-
-
-
-
-
-
-
-
-
-
APT30SCD120S
Microsemi
DIODE SCHOTTKY 1.2KV 99A D3PAK
5.724
-
Silicon Carbide Schottky
1200V
99A (DC)
1.8V @ 30A
No Recovery Time > 500mA (Io)
0ns
600µA @ 1200V
2100pF @ 0V, 1MHz
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
D3Pak
-55°C ~ 150°C
JAN1N5802URS
Microsemi
DIODE GEN PURP 50V 1A APKG
7.020
Military, MIL-PRF-19500/477
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 50V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JAN1N5804URS
Microsemi
DIODE GEN PURP 100V 1A APKG
7.920
Military, MIL-PRF-19500/477
Standard
100V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 100V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 175°C
JAN1N5806URS
Microsemi
DIODE GEN PURP 150V 1A APKG
7.434
Military, MIL-PRF-19500/477
Standard
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 150V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 175°C