Microsemi Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 30/86
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 500V 3A D5B |
6.462 |
|
- | Standard | 500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2µA @ 500V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
7.776 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
7.650 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
3.690 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
8.280 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
2.142 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
2.232 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
7.722 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
3.204 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
8.910 |
|
Military, MIL-PRF-19500/429 | Standard | 1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
RECTIFIER DIODE |
4.518 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE GEN PURP 100V 1A D5A |
2.646 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
3.834 |
|
Military, MIL-PRF-19500/360 | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
6.750 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A D5A |
6.786 |
|
Military, MIL-PRF-19500/429 | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO213AB |
3.672 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 300MA AXIAL |
7.506 |
|
Military, MIL-PRF-19500/578 | Standard | 125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Through Hole | Axial | 05 Plastic Package | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
10.182 |
|
Military, MIL-PRF-19500/286 | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA AXIAL |
8.784 |
|
Military, MIL-PRF-19500/609 | Standard | 75V | 300mA (DC) | 1.2V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100µA @ 75V | - | Through Hole | D, Axial | D-5D | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA AXIAL |
7.380 |
|
Military, MIL-PRF-19500/609 | Standard | 50V | 300mA (DC) | 1.1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 100µA @ 50V | - | Through Hole | D, Axial | D-5D | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A B-MELF |
2.358 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 70V 33MA DO35 |
423 |
|
Military, MIL-PRF-19500/444 | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 70V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 880V 1A AXIAL |
4.356 |
|
- | Standard | 880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1.75A AXIAL |
2.286 |
|
- | Standard | 600V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 2µA @ 600V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
7.632 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 3A AXIAL |
6.894 |
|
Military, MIL-PRF-19500/411 | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 6A B-MELF |
7.344 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
6.534 |
|
Military, MIL-PRF-19500/424 | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 100V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A B-MELF |
6.174 |
|
Military, MIL-PRF-19500/420 | Standard | 400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A D5A |
7.056 |
|
Military, MIL-PRF-19500/429 | Standard | 1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |