Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 92/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-220AB |
2.484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | ±30V | 4530pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO262-3-1 |
3.708 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | ±20V | 14000pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO262-3 |
6.714 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | ±16V | 13000pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 106A D2PAK |
5.652 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
2.898 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | 1110pF @ 100V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
TRENCH 40<-<100V |
4.716 |
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OptiMOS™, StrongIRFET™ | - | - | 80V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO220FP |
7.398 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | ±20V | 1600pF @ 25V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
4.392 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.3mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | ±20V | 6540pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 59A D2PAK |
5.202 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 260A D2PAK |
8.730 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 5890pF @ 15V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW |
7.596 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO262 |
3.006 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
2.808 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
2.772 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
3.186 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 2860pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 55A D2PAK |
6.660 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | - | 26mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | - | 3700pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 75A D2PAK |
4.716 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
6.588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 2860pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
5.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | ±20V | 5000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CHANNEL_30/40V |
7.596 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 25V 61A DIRECTFET L6 |
8.496 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 61A (Ta), 270A (Tc) | 4.5V, 10V | 0.7mOhm @ 61A, 10V | 2.35V @ 150µA | 96nC @ 4.5V | ±20V | 6500pF @ 13V | - | 4.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3 |
3.654 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
5.544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 108µA | 87nC @ 10V | ±20V | 6240pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK |
4.770 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 4460pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
8.604 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.8mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | ±20V | 9600pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO262-3 |
7.110 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 7.1mOhm @ 80A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 1A SAWN ON FOIL |
6.102 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 150µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7-3 |
8.802 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 200µA | 300nC @ 10V | ±16V | 23000pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO263-3 |
7.722 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
4.896 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.4mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |