Infineon Technologies Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 88/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 100V 47A TO262-3 |
8.550 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
6.570 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.3mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 3400pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
6.102 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10.8A (Ta) | 10V | 460mOhm @ 7.1A, 10V | 3.9V @ 680µA | 64nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET P-CH TO263-3 |
6.930 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 340µA | 205nC @ 10V | ±20V | 14790pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3 |
5.904 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 5.8mOhm @ 80A, 10V | 4V @ 90µA | 70nC @ 10V | ±20V | 4800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
7.110 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 150µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
5.058 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2520pF @ 25V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 42A D2PAK |
6.534 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
2.718 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | 10820pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
8.676 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 75A TO220AB |
6.696 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 13A 4VSON |
3.906 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 185mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 77W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 11.4A TO220 |
8.712 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
3.438 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
6.642 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-3 |
3.402 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 4VSON |
7.272 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 195mOhm @ 2.9A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 33A D2PAK |
2.250 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | ±30V | 2020pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 162A D2PAK |
4.680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
7.974 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | ±20V | 6600pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 80A TO262-3 |
4.716 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220-FP |
7.416 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 13.8A TO262 |
2.304 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
3.546 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
2.610 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
4.122 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7.254 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | ±20V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL 650V 18A TO220 |
2.502 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 29A MX |
7.452 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 29A (Ta), 168A (Tc) | 4.5V, 10V | 1.6mOhm @ 29A, 10V | 2.1V @ 100µA | 38nC @ 4.5V | ±16V | 3480pF @ 13V | - | 2.1W (Ta), 69W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 75A TO-220AB |
4.824 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |