Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 74/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 30V 29A 8TDSON |
4.626 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2V @ 250µA | 33nC @ 10V | ±20V | 2200pF @ 15V | Schottky Diode (Body) | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 500V 3.2A DPAK |
8.532 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 15nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 14A D2PAK |
4.068 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 200mOhm @ 8.4A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
7.002 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 25V 27A 8SON |
8.766 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2V @ 250µA | 30nC @ 10V | ±16V | 2000pF @ 12V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 59A TO220 |
7.596 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 59A (Tc) | 6V, 10V | 10.6mOhm @ 35A, 10V | 3.7V @ 100µA | 83nC @ 10V | ±20V | 3049pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 13A DPAK |
6.984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 830pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 61A DPAK |
5.184 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 61A DPAK |
3.150 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 12.5mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
3.510 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3 |
3.780 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | 350pF @ 500V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A DPAK |
3.708 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-1 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
2.070 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | - | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 10A DPAK |
7.722 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 5A 2WDSON |
4.788 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 5A (Ta), 15A (Tc) | 7V, 10V | 45mOhm @ 8A, 10V | 3.5V @ 8µA | 6nC @ 10V | ±20V | 390pF @ 37.5V | - | 2.2W (Ta), 18W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 25A 8SON |
5.274 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2V @ 250µA | 33nC @ 10V | ±20V | 2000pF @ 15V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 10A D2PAK |
7.110 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 11A 8-PQFN |
5.328 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 63A (Tc) | 10V | 12.4mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 3152pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET P-CH TO252-3 |
3.222 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 4.5V, 10V | 7.8mOhm @ 70A, 10V | 2.2V @ 120µA | 92nC @ 10V | ±16V | 5430pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
5.382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | ±20V | 2190pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET NCH 600V 9.9A TO220 |
6.336 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9.9A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | Super Junction | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MV POWER MOS |
5.922 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO262-3 |
3.492 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 8.2mOhm @ 45A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MV POWER MOS |
6.480 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
4.644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 80V 13A 2WDSON |
3.204 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 13A (Ta), 50A (Tc) | 10V | 10.4mOhm @ 10A, 10V | 3.5V @ 40µA | 31nC @ 10V | ±20V | 2100pF @ 40V | - | 2.8W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
8.190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2400pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
6.732 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 75V 30A TO252-3 |
5.796 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 30A (Tc) | 10V | 21.5mOhm @ 50A, 10V | 4V @ 80µA | 57nC @ 10V | ±20V | 1400pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 87A TO220 |
7.506 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 7.3mOhm @ 52A, 10V | 3.7V @ 100µA | 122nC @ 10V | ±20V | 4650pF @ 25V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |