Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 61/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 600V 77.5A TO 247-3 |
5.742 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 77.5A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.5V @ 2.96mA | 290nC @ 10V | ±20V | 6530pF @ 10V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 60A TO-247 |
3.204 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 75A TO247-3 |
8.100 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215nC @ 10V | ±20V | 9900pF @ 400V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET P-CH 100V 360MA SC-59-3 |
2.646 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 360mA (Ta) | 4.5V, 10V | 1.8Ohm @ 360mA, 10V | 1V @ 170µA | 7nC @ 10V | ±20V | 165pF @ 25V | - | 500mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET NCH 600V 3.7A SOT223 |
8.478 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Tc) | 10V | 2.1Ohm @ 800mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | Super Junction | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Infineon Technologies |
MOSFET N-CH 30V 44A 5X6 PQFN |
5.778 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15nC @ 10V | ±20V | 1180pF @ 10V | - | 3.2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 2.3A TO-252-3 |
8.010 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 38W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 5.5A 6TSOP |
7.416 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29nC @ 10V | ±20V | 805pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-1 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 48A TDSON-8 |
6.480 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 48A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 60V 1.17A SOT-223 |
3.834 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | ±20V | 160pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
N-CHANNEL_30/40V |
2.322 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 25A, 10V | 2V @ 13µA | 23nC @ 10V | ±16V | 1209pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223 |
7.506 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | ±20V | 368pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8-SOIC |
2.754 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.8mOhm @ 16A, 10V | 2.25V @ 250µA | 27nC @ 4.5V | ±20V | 2080pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 40A TDSON-8 |
6.894 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Ta), 40A (Tc) | 4.5V, 10V | 26.5mOhm @ 20A, 10V | 2.4V @ 43µA | 21nC @ 10V | ±20V | 1600pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 11.3A 8TDSON |
4.338 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 11.3A (Tc) | 10V | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7nC @ 10V | ±20V | 680pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223 |
4.698 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14nC @ 5V | ±20V | 430pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO263-3 |
3.672 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 5.4mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON |
7.470 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 4mOhm @ 50A, 10V | 3.8V @ 67µA | 54nC @ 10V | ±20V | 3900pF @ 40V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A TDSON-8 |
4.752 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 93µA | 130nC @ 10V | ±20V | 11000pF @ 30V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 6A TO220 |
5.472 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 55A TO-220AB |
7.668 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V | 16.5mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1812pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET TO263-3 |
4.068 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 76A 8TDSON |
5.238 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 76A (Tc) | 8V, 10V | 11mOhm @ 38A, 10V | 4.6V @ 91µA | 35nC @ 10V | ±20V | 2770pF @ 75V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 18A WDSON-2 |
7.002 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 18A (Ta), 90A (Tc) | 10V | 4.4mOhm @ 30A, 10V | 3.5V @ 97µA | 73nC @ 10V | ±20V | 5700pF @ 40V | - | 2.2W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO220FP |
5.616 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | ±20V | 570pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO-220AB |
5.958 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 100V 15A TO220-3 |
5.364 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62nC @ 10V | ±20V | 1490pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 6A TO-220AB |
6.426 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 16A TO-263 |
5.076 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MV POWER MOS |
4.914 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 150V | 114A (Tc) | 8V, 10V | 7.3mOhm @ 57A, 10V | 4.6V @ 160µA | 61nC @ 10V | ±20V | 4700pF @ 75V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |