Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 37/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
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Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET P-CH 150V 0.7A 8-SOIC |
4.266 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 700mA (Ta) | 10V | 2.4Ohm @ 420mA, 10V | 5V @ 250µA | 9nC @ 10V | ±20V | 150pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 28A DPAK |
4.392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN |
2.520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1160pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
5.562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1020pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8DSO |
2.790 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 5.1mOhm @ 18A, 10V | 2V @ 250µA | 55nC @ 10V | ±20V | 4300pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 39.6A TSDSON-8 |
3.780 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 39.5A (Tc) | 6V, 10V | 18mOhm @ 20A, 10V | 3.1V @ 48µA | 30nC @ 10V | ±25V | 2220pF @ 15V | - | 2.1W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A 8-SOIC |
6.966 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | ±20V | 440pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 48A TDSON-8 |
8.334 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 48A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2V @ 250µA | 24nC @ 10V | ±20V | 1900pF @ 15V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8 |
2.646 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 6V, 10V | 12mOhm @ 20A, 10V | 3.1V @ 73µA | 45nC @ 10V | ±25V | 3360pF @ 15V | - | 2.1W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
COOLMOS P7 800V SOT-223 |
4.608 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 3.3Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | ±20V | 120pF @ 500V | - | 6.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8DSO |
4.302 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 8.3mOhm @ 14A, 10V | 2V @ 250µA | 27nC @ 10V | ±20V | 2100pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
7.254 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 2.2V @ 250µA | 17nC @ 10V | ±20V | 1500pF @ 15V | - | 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 12A 8-SOIC |
7.578 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 10V, 20V | 8.5mOhm @ 12A, 20V | 2.4V @ 25µA | 52nC @ 10V | ±25V | 1680pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 9.4A DPAK |
8.676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 8.7A DPAK |
4.734 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 310pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 700V 7.4A TO252-3 |
8.028 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | Super Junction | 68W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223 |
21.144 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1.8A (Ta) | 4.5V, 10V | 230mOhm @ 1.8A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | ±20V | 329pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 12A TSDSON-8 |
8.154 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 2V @ 250µA | 10nC @ 10V | ±20V | 670pF @ 15V | - | 2.1W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 8.5A SOT223 |
8.460 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | ±16V | 364pF @ 400V | - | 6.9W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
6.588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.6mOhm @ 30A, 10V | 2.2V @ 10µA | 14nC @ 10V | ±16V | 980pF @ 25V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
4.050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 2.6A SOT223 |
4.086 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.6A (Ta) | 10V | 185mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | ±30V | 420pF @ 25V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 800V 1.9A TO252-3 |
4.878 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 3.3Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | ±20V | 120pF @ 500V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 31A TSDSON-8 |
6.660 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 8.9A (Ta), 31A (Tc) | 10V | 16.5mOhm @ 20A, 10V | 4V @ 10µA | 10nC @ 10V | ±20V | 840pF @ 20V | - | 2.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT223 |
3.186 |
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SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | - | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 40A TSDSON-8 |
2.034 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.2V @ 250µA | 35nC @ 10V | ±20V | 2800pF @ 15V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 10A 8-SOIC |
8.856 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 1V @ 250µA | 92nC @ 10V | ±20V | 1700pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A MICRO8 |
3.508 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 90mOhm @ 2.4A, 10V | 1V @ 250µA | 30nC @ 10V | ±20V | 520pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3-313 |
4.716 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 7.9mOhm @ 50A, 10V | 4V @ 17µA | 22.4nC @ 10V | ±20V | 1780pF @ 6V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 20A 8TDSON |
5.364 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 78A (Tc) | 4.5V, 10V | 3.7mOhm @ 30A, 10V | 2V @ 250µA | 17nC @ 10V | ±20V | 1100pF @ 15V | - | 2.5W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |