Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 213/225
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Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 500V 2.4A TO-251 |
3.492 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6nC @ 10V | ±20V | 124pF @ 100V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 500V 1.7A TO-251 |
2.070 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | ±20V | 84pF @ 100V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 2.4A TO-251 |
4.770 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO-251 |
7.704 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 1.5nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 23A DIRECTFET |
6.480 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4110pF @ 15V | - | 2.1W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N CH 25V 16A S1 |
6.084 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Ta), 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 16A, 10V | 2.1V @ 25µA | 11nC @ 4.5V | ±16V | 1038pF @ 13V | - | 2.1W (Ta), 20W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V 28A S3 |
7.902 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta), 125A (Tc) | 4.5V, 10V | 1.7mOhm @ 28A, 10V | 2.1V @ 50µA | 25nC @ 4.5V | ±16V | 2510pF @ 13V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ S3C | DirectFET™ Isometric S3C |
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Infineon Technologies |
MOSFET N-CH 25V 29A MX |
3.456 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 29A (Ta), 168A (Tc) | 4.5V, 10V | 1.6mOhm @ 29A, 10V | 2.1V @ 100µA | 38nC @ 4.5V | ±16V | 3480pF @ 13V | - | 2.1W (Ta), 69W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N CH 30V 31A MX |
2.844 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 53nC @ 4.5V | ±20V | 6030pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 28A MX |
6.624 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4700pF @ 15V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 27A MX |
5.904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4404pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 60V 100A 8-PQFN |
5.256 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | ±16V | 5360pF @ 25V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A 6TSOP |
5.562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
7.236 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO-263-3 |
6.894 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-263-3 |
7.974 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
2.808 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315nC @ 10V | ±20V | 10250pF @ 25V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 56A DPAK |
5.130 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 56A (Tc) | 6V, 10V | 3.9mOhm @ 56A, 10V | 3.9V @ 100µA | 130nC @ 10V | ±20V | 3150pF @ 25V | - | 98W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 31A DIRECTFET |
2.106 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 63nC @ 4.5V | ±20V | 6030pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 40A PQFN |
6.372 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.1V @ 35µA | 20nC @ 10V | ±20V | 1270pF @ 13V | - | 2.7W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 100V 19A 8QFN |
7.524 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Ta) | 10V | 5.2mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | ±20V | 2320pF @ 50V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 60V 240A D2PAK |
6.264 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354nC @ 10V | ±20V | 12960pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N CH 60V 195A D2PAK |
6.012 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 60V 240A D2PAK |
4.806 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 6V, 10V | 1.95mOhm @ 100A, 10V | 3.7V @ 250µA | 300nC @ 10V | ±20V | 9990pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N CH 60V 195A D2PAK |
4.266 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | ±20V | 10034pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 60V 173A D2PAK |
2.160 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210nC @ 10V | ±20V | 7020pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 60V 110A D2PAK |
2.448 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4555pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 211A DIRECTFET |
5.112 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 20V | 38A (Ta), 211A (Tc) | 2.5V, 4.5V | 0.75mOhm @ 50A, 10V | 1.1V @ 100µA | 158nC @ 4.5V | ±12V | 8292pF @ 10V | - | 2.1W (Ta), 63W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MD | DirectFET™ Isometric MD |
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Infineon Technologies |
MOSFET N-CH 60V 90A DPAK |
3.186 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 56A DPAK |
3.474 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 6V, 10V | 7.9mOhm @ 43A, 10V | 3.7V @ 100µA | 87nC @ 10V | ±20V | 3020pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |