Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 168/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO-220 |
7.920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 7.4mOhm @ 66A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 6130pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO-220 |
5.472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 4.5V, 10V | 7.1mOhm @ 67A, 10V | 2V @ 250µA | 233nC @ 10V | ±20V | 6820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO-220 |
5.832 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 0.8A TO-251 |
6.516 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 800mA (Tc) | 10V | 6Ohm @ 500mA, 10V | 3.9V @ 250µA | 5nC @ 10V | ±20V | 100pF @ 25V | - | 11W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-251 |
5.400 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO-251 |
7.992 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16nC @ 10V | ±20V | 420pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-251 |
7.776 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9nC @ 10V | ±20V | 580pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO-251 |
2.898 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35nC @ 10V | ±20V | 970pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 10.5A IPAK |
7.344 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.5A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3-1 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 60V 18.6A TO-251 |
4.572 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.6A (Tc) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 33nC @ 10V | ±20V | 860pF @ 25V | - | - | - | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 30A IPAK |
3.942 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 10V | 8.2mOhm @ 30A, 10V | 4V @ 85µA | 47nC @ 10V | ±20V | 2170pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3-1 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 60V 30A IPAK |
4.410 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | ±20V | 1535pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-247 |
7.074 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-247 |
8.676 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-247 |
6.534 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | ±20V | 1460pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO-247 |
3.924 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2320pF @ 25V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 560V 52A TO-247 |
6.876 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 52A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 290nC @ 10V | ±20V | 6800pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 3.2A TO-220 |
4.374 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 29.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-220 |
6.768 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 20V 390MA SC75 |
7.686 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 390mA (Ta) | 2.5V, 4.5V | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | ±12V | 56pF @ 15V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-75 | SC-75, SOT-416 |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3.006 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 110µA | 66nC @ 5V | ±20V | 8290pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3.454 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2V @ 80µA | 41nC @ 5V | ±20V | 5090pF @ 15V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 89A TDSON-8 |
7.200 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 89A (Tc) | 4.5V, 10V | 4.8mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | ±20V | 2670pF @ 15V | - | 2.8W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 73A TDSON-8 |
6.174 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17.5A (Ta), 73A (Tc) | 4.5V, 10V | 5.5mOhm @ 50A, 10V | 2V @ 35µA | 21nC @ 5V | ±20V | 2670pF @ 15V | - | 17.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 30A TDSON-8 |
3.330 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11.9A (Ta), 30A (Tc) | 4.5V, 10V | 11.9mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | ±20V | 1370pF @ 15V | - | 2.8W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 20V 4.7A TSOP-6 |
4.392 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | ±12V | 654pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 30V 5.5A TSOP6 |
4.428 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29nC @ 10V | ±20V | 805pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8DSO |
7.686 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 5.2mOhm @ 17A, 10V | 2V @ 70µA | 43nC @ 5V | ±20V | 5530pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12A 8DSO |
2.304 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 6.8mOhm @ 15A, 10V | 2V @ 45µA | 25nC @ 5V | ±20V | 3230pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 9A 8DSO |
4.068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2V @ 25µA | 13nC @ 5V | ±20V | 1730pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |