Infineon Technologies Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 161/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 85V 100A TO-220 |
3.060 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 138nC @ 10V | ±20V | 9240pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220 |
5.022 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 80A, 10V | 2V @ 150µA | 126nC @ 10V | ±20V | 4300pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220 |
5.778 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 180µA | 118nC @ 10V | ±20V | 4100pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-220 |
3.834 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.6mOhm @ 50A, 10V | 2V @ 40µA | 25nC @ 5V | ±20V | 2782pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220 |
5.508 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 150µA | 93nC @ 10V | ±20V | 3500pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 95A TO-220 |
6.138 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 95A (Tc) | 10V | 8.5mOhm @ 95A, 10V | 4V @ 130µA | 100nC @ 10V | ±20V | 6660pF @ 50V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 85V 95A TO-220 |
6.894 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 95A (Tc) | 10V | 6.4mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | ±20V | 6690pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
5.670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 230µA | 480nC @ 10V | ±20V | 21620pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
4.068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4.4mOhm @ 80A, 10V | 4V @ 150µA | 314nC @ 10V | ±20V | 14230pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
7.380 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 3mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | ±16V | 26240pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220 |
8.244 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 5V, 10V | 3.8mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | ±16V | 17270pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-220 |
7.164 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 9.9mOhm @ 50A, 10V | 2V @ 20µA | 13nC @ 5V | ±20V | 1639pF @ 15V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 25V 30A TO-220 |
5.220 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 11.5mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | ±20V | 1358pF @ 15V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 75A TO-220 |
8.784 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 94µA | 62nC @ 10V | ±20V | 2100pF @ 30V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 67A TO-220 |
5.562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 12.9mOhm @ 67A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4320pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 85V 67A TO-220 |
4.338 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 67A (Tc) | 10V | 12.9mOhm @ 67A, 10V | 4V @ 83µA | 64nC @ 10V | ±20V | 4340pF @ 40V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-220 |
2.088 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 10nC @ 5V | ±20V | 1355pF @ 15V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 85V 53A TO-220 |
3.006 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 53A (Tc) | 10V | 16.5mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | ±20V | 3230pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO-220 |
8.280 |
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- | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 25A TO-220 |
3.870 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 25A (Tc) | 10V | 25.1mOhm @ 15A, 10V | 4V @ 20µA | 41nC @ 10V | ±20V | 1862pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 25A TO-220 |
7.614 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 25A (Tc) | 5V, 10V | 21.6mOhm @ 17A, 10V | 2.2V @ 20µA | 47nC @ 10V | ±16V | 2260pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO-220 |
8.136 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 26mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | ±20V | 2070pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 85V 35A TO-220 |
3.618 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 35A (Tc) | 10V | 26mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | ±20V | 2070pF @ 40V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 45A TO-220 |
4.086 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 45A (Tc) | 10V | 15.7mOhm @ 23A, 10V | 4V @ 30µA | 57nC @ 10V | ±20V | 2980pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 45A TO-220 |
5.544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 45A (Tc) | 5V, 10V | 13.4mOhm @ 26A, 10V | 2.2V @ 30µA | 75nC @ 10V | ±16V | 3600pF @ 25V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 20A TO-220 |
4.536 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 10V | 50mOhm @ 20A, 10V | 4V @ 20µA | 16nC @ 10V | ±20V | 1090pF @ 50V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 77A TO-220 |
5.832 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 77A (Tc) | 10V | 9.1mOhm @ 39A, 10V | 4V @ 55µA | 103nC @ 10V | ±20V | 5335pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 13A TO-220 |
6.354 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 80mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | ±20V | 716pF @ 50V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-220 |
7.380 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.4mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | ±20V | 10760pF @ 25V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-220 |
4.896 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | 4V @ 80µA | 170nC @ 10V | ±20V | 7768pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |