Infineon Technologies Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreInfineon Technologies
Record 6.749
Pagina 145/225
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
4.284 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | ±16V | 2900pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 27A I-PAK |
3.060 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK |
8.532 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50nC @ 4.5V | ±16V | 1600pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 1.6A SOT223 |
7.542 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 220mOhm @ 1.6A, 10V | 4V @ 250µA | 8nC @ 10V | ±20V | 160pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 5.1A SOT223 |
6.030 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5.1A (Ta) | 10V | 57.5mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 340pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT223 |
5.472 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 1.6A SOT223 |
8.838 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.6A (Ta) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223 |
4.212 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 45mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | 530pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 3.7A SOT223 |
4.248 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.7A (Ta) | 10V | 45mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 660pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC |
4.536 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 300V 1.6A 8-SOIC |
7.506 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 1.6A (Ta) | 10V | 400mOhm @ 960mA, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 730pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
2.988 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | ±12V | 2530pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC |
4.284 |
|
FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 32mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | ±20V | 650pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 94A DPAK |
2.646 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 94A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.25V @ 250µA | 32nC @ 4.5V | ±20V | 2920pF @ 15V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 4.7A 8-SOIC |
2.196 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 4.7A (Ta) | 4.5V, 10V | 62mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | ±20V | 710pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET P-CH 14V 11A 8-SOIC |
8.424 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 14V | 11A (Ta) | 2.5V, 4.5V | 12mOhm @ 11A, 4.5V | 600mV @ 250µA | 125nC @ 5V | ±12V | 8075pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 130A TO-247AC |
6.390 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 10V | 5.5mOhm @ 78A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6760pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK |
2.304 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 870pF @ 10V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 50A TO-262 |
8.424 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 870pF @ 10V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 50A TO-220AB |
2.628 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 870pF @ 10V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 50A D2PAK |
6.696 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 870pF @ 10V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 36A TO-262 |
8.712 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | ±20V | 550pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 92A TO-262 |
7.794 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | ±20V | 2150pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 59A TO-262 |
5.022 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | ±20V | 1210pF @ 15V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 92A TO-262 |
7.236 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | ±20V | 2150pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 105A TO-262 |
3.580 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35nC @ 4.5V | ±20V | 2840pF @ 15V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 51A TO-262 |
3.114 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1460pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 61A TO-262 |
7.506 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 14A TO220FP |
5.958 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 71mOhm @ 7.8A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 77A TO-262 |
5.562 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |