SUM60020E-GE3 Datasheet
SUM60020E-GE3 Datasheet
Totale pagine: 8
Dimensioni: 195,86 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SUM60020E-GE3
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Produttore Vishay Siliconix Serie TrenchFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 80V Corrente - Scarico continuo (Id) @ 25 ° C 150A (Tc) Tensione inverter (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 227nC @ 10V Vgs (massimo) ±20V Capacità di ingresso (Ciss) (Max) @ Vds 10680pF @ 40V Funzione FET - Dissipazione di potenza (max) 375W (Tc) Temperatura di esercizio -55°C ~ 175°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore TO-263 (D²Pak) Pacchetto / Custodia TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |