SI1011X-T1-GE3 Datasheet
SI1011X-T1-GE3 Datasheet
Totale pagine: 8
Dimensioni: 160,86 KB
Vishay Siliconix
Questa scheda tecnica copre i numeri di parte di 1:
SI1011X-T1-GE3
![SI1011X-T1-GE3 Datasheet Pagina 1](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0001.webp)
![SI1011X-T1-GE3 Datasheet Pagina 2](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0002.webp)
![SI1011X-T1-GE3 Datasheet Pagina 3](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0003.webp)
![SI1011X-T1-GE3 Datasheet Pagina 4](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0004.webp)
![SI1011X-T1-GE3 Datasheet Pagina 5](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0005.webp)
![SI1011X-T1-GE3 Datasheet Pagina 6](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0006.webp)
![SI1011X-T1-GE3 Datasheet Pagina 7](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0007.webp)
![SI1011X-T1-GE3 Datasheet Pagina 8](http://pneda.ltd/static/datasheets/images/27/si1011x-t1-ge3-0008.webp)
Produttore Vishay Siliconix Serie TrenchFET® Tipo FET P-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 12V Corrente - Scarico continuo (Id) @ 25 ° C - Tensione inverter (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 640mOhm @ 400mA, 4.5V Vgs (th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (massimo) ±5V Capacità di ingresso (Ciss) (Max) @ Vds 62pF @ 6V Funzione FET - Dissipazione di potenza (max) 190mW (Ta) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore SC-89-3 Pacchetto / Custodia SC-89, SOT-490 |