IRF7809AV Datasheet
IRF7809AV Datasheet
Totale pagine: 8
Dimensioni: 200,04 KB
Infineon Technologies
Sito web: https://www.infineon.com
Questa scheda tecnica copre i numeri di parte di 1:
IRF7809AV
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Produttore Infineon Technologies Serie HEXFET® Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 30V Corrente - Scarico continuo (Id) @ 25 ° C 13.3A (Ta) Tensione inverter (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 4.5V Vgs (th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V Vgs (massimo) ±12V Capacità di ingresso (Ciss) (Max) @ Vds 3780pF @ 16V Funzione FET - Dissipazione di potenza (max) 2.5W (Ta) Temperatura di esercizio -55°C ~ 150°C (TJ) Tipo di montaggio Surface Mount Pacchetto dispositivo fornitore 8-SO Pacchetto / Custodia 8-SOIC (0.154", 3.90mm Width) |