BUK6E4R0-75C Datasheet
BUK6E4R0-75C Datasheet
Totale pagine: 14
Dimensioni: 754,08 KB
Nexperia
Questa scheda tecnica copre i numeri di parte di 1:
BUK6E4R0-75C,127
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Produttore Nexperia USA Inc. Serie Automotive, AEC-Q101, TrenchMOS™ Tipo FET N-Channel Tecnologia MOSFET (Metal Oxide) Tensione Drain to Source (Vdss) 75V Corrente - Scarico continuo (Id) @ 25 ° C 120A (Tc) Tensione inverter (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V Vgs (th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 234nC @ 10V Vgs (massimo) ±16V Capacità di ingresso (Ciss) (Max) @ Vds 15450pF @ 25V Funzione FET - Dissipazione di potenza (max) 306W (Tc) Temperatura di esercizio -55°C ~ 175°C (TJ) Tipo di montaggio Through Hole Pacchetto dispositivo fornitore I2PAK Pacchetto / Custodia TO-262-3 Long Leads, I²Pak, TO-262AA |